Non-volatile semiconductor memory device and method of manufacturing the same

ABSTRACT

A method of manufacturing a non-volatile semiconductor memory device including previously forming a recess in a first peripheral region on a semiconductor substrate, forming a first gate insulator having a first thickness in the recess, forming a second gate insulator having a second thickness less than the first thickness in an array region and a second peripheral region on the semiconductor substrate, successively depositing first and second gate electrode films and first and second mask insulators on each of the first and second gate insulators, forming an isolation trench on a surface of the semiconductor substrate to correspond to each position between the array region and the first and second regions of the peripheral region, depositing a buried insulator on the entire surface, and polishing an upper surface of the buried insulator so that the upper surface can be planarized.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims priority under 35U.S.C. §120 from U.S. Ser. No. 13/088,030, filed Apr. 15, 2011, which isa continuation of U.S. Pat. No. 7,948,026 issued May 24, 2011, which isa continuation of U.S. Pat. No. 7,678,663 issued Mar. 16, 2010, which isa continuation of U.S. Pat. No. 7,297,594, issued Nov. 20, 2007, whichis a division of U.S. Pat. No. 6,897,524, issued May 24, 2005, and isbased upon and claims the benefit of priority under 35 U.S.C. §119 fromthe prior Japanese Patent Application No. 2002-199915, filed Jul. 9,2002. The entire contents of these applications are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a non-volatile semiconductor memorydevice and a method of manufacturing the same. More particularly, thepresent invention relates to a NAND-type flash memory, which includes afloating gate electrode and two or more gate oxide films having adifferent thickness in peripheral and cell sections.

2. Description of the Related Art

Recently, the development of a NAND-type flash memory has been made. TheNAND-type flash memory is formed by gate pre-forming (or gate oxide filmpre-forming) process. According to the gate pre-forming process, trenchisolation is employed, and several gate oxide films having differentthickness are separately formed.

However, in the NAND-type flash memory, gate oxide films 101 a and 102 aon a silicon (Si) substrate 103 are different in their thickness betweena cell/Vcc section 101 and a Vpp section 102, as shown in FIG. 5A. Forthis reason, a step (a) is formed in the upper surface of SiN films(stopper SiN films) 101 c and 102 c on gate electrodes 101 b and 102 b.For example, the step (a) is a factor of causing the followingdisadvantage in shallow-trench isolation (STI) formation. As illustratedin FIG. 5B, a difference is made in the thickness of SiN films when theupper surface of a buried insulator 104 is removed by chemicalmechanical polishing (CMP) using SiN films 101 c and 102 c as a stopper.More specifically, the SiN film 102 c of the Vpp section 102 is thinnerthan the SiN film 101 c of the cell/Vcc section 101. The excessthickness reduction of the SiN film 102 c is a factor of reducing the aheight (h) to the gate oxide film 102 a. As a result, the gate oxidefilm 102 a is easily damaged by etching (e.g., wet etching) after CMP.The gate oxide film 102 a being damaged is a factor in causing failuresuch as gate leakage.

In particular, the NAND-type flash memory has a high-voltage row decodercircuit 111. As shown in FIG. 6, the row decoder circuit 111 is arrangedin a peripheral region (corresponding to Vpp section 102) adjacent to acell array region (Cell Array) 110 corresponding to the cell/Vcc section101. Normally, the row decoder circuit 111 is formed using a gate oxidefilm for Vpp system (Vpp oxide film 102 a). In other words, ahigh-voltage transistor exists in the row decoder circuit 111 of theNAND-type flash memory.

Conversely, a Vcc oxide film 101 a is used, in general, in the cellarray region 110, a guard ring 112 arranged between the cell arrayregion 110 and the row decoder circuit 111 and a dummy AA pattern 113near the row decoder circuit 111. For this reason, when a film to make aburied insulator 104 is subjected to CMP in STI formation, the SiN film102 c of the row decoder circuit 111 is excessively reduced in thicknessas compared with the SiN film 101 c. This is a factor in causing theforegoing failure.

In the conventional case, it is possible to readily realize theNAND-type flash memory having several gate oxide films of differentthicknesses according to the gate pre-forming process. However, thestopper SiN film of the row decoder circuit is greatly reduced inthickness by CMP in the STI formation. As a result, the gate oxide filmunder the stopper SiN film is easily damaged; for this reason, there isa problem that failure such as gate leakage occurs.

BRIEF SUMMARY OF THE INVENTION

According to a first aspect of the present invention, there is provideda non-volatile semiconductor memory device comprising: a semiconductorsubstrate; a memory cell array formed on the semiconductor substrate,and including a first gate insulator having a first thickness; ahigh-voltage transistor circuit formed on the semiconductor substrate,and including a second gate insulator having a second thickness greaterthan the first thickness; and a peripheral circuit formed on thesemiconductor substrate, and including the second gate insulator.

According to a second aspect of the present invention, there is provideda method of manufacturing a non-volatile semiconductor memory device,comprising: successively depositing a first gate insulator having afirst thickness, a first gate electrode film and a first mask insulatoron a semiconductor substrate; leaving the first gate insulator, thefirst gate electrode film and the first mask insulator in only arrayregion; separately forming the following gate insulators in a peripheralregion excepting the array region, that is, forming a second gateinsulator having a second thickness greater than the first thickness ina first region of a peripheral region, and forming a third gateinsulator having a thickness the same as the first thickness in a secondregion of the peripheral region; successively depositing a second gateelectrode film and a second mask insulator thicker than the first maskinsulator on each of the first mask insulator, the second gate insulatorand the third gate insulator; removing the second mask insulator and thesecond gate electrode film on the first mask insulator; forming anisolation trench on a surface of the semiconductor substrate tocorrespond to each position between the array region and first andsecond regions of the peripheral region; depositing a buried insulatoron the entire surface; and polishing an upper surface of the buriedinsulator so that the upper surface can be planarized.

According to a third aspect of the present invention, there is provideda method of manufacturing a non-volatile semiconductor memory device,comprising: successively depositing a first gate insulator having afirst thickness, a first gate electrode film and a first mask insulatoron a semiconductor substrate; leaving the first gate insulator, thefirst gate electrode film and the first mask insulator in only an arrayregion and a first peripheral region; forming a second gate insulatorhaving a second thickness greater than the first thickness in a secondperipheral region excepting the array region and the first peripheralregion; successively depositing a second gate electrode film thinnerthan the first gate electrode film and a second mask insulator on eachof the first mask insulator and the second gate insulator; removing thesecond mask insulator and the second gate electrode film on the firstmask insulator; forming an isolation trench on a surface of thesemiconductor substrate to correspond to each position between the arrayregion and first and second regions of the peripheral region; depositinga buried insulator on the entire surface; and polishing an upper surfaceof the buried insulator so that the upper surface can be planarized.

According to a fourth aspect of the present invention, there is provideda method of manufacturing a non-volatile semiconductor memory device,comprising: previously forming a recess in a first peripheral region ona semiconductor substrate; forming a first gate insulator having a firstthickness in the recess; forming a second gate insulator having a secondthickness less than the first thickness in an array region and a secondperipheral region on the semiconductor substrate; successivelydepositing first and second gate electrode films and first and secondmask insulators on each of the first and second gate insulators; formingan isolation trench on a surface of the semiconductor substrate tocorrespond to each position between the array region and the first andsecond regions of the peripheral region; depositing a buried insulatoron the entire surface; and polishing an upper surface of the buriedinsulator so that the upper surface can be planarized.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1A is a plan view showing a NAND-type flash memory according to afirst embodiment of the present invention, and FIG. 1B is across-sectional view taken along a line IB-IB of FIG. 1A;

FIG. 2A to FIG. 2D are process cross-sectional views to explain a methodof manufacturing a NAND-type flash memory according to a secondembodiment of the present invention;

FIG. 3A to FIG. 3D are process cross-sectional views to explain a methodof manufacturing a NAND-type flash memory according to a thirdembodiment of the present invention;

FIG. 4A to FIG. 4C are process cross-sectional views to explain a methodof manufacturing a NAND-type flash memory according to a fourthembodiment of the present invention;

FIG. 5A and FIG. 5B are cross-sectional views showing the process ofmanufacturing a NAND-type flash memory to explain the prior art and theproblem; and

FIG. 6 is a plan view showing a conventional a NAND-type flash memory.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described below withreference to the accompanying drawings.

First Embodiment

FIG. 1A and FIG. 1B show the structure of a NAND-type flash memoryformed by gate pre-forming (or gate oxide pre-forming) process accordingto a first embodiment of the present invention. FIG. 1A is a plan viewshowing principal parts of the NAND-type flash memory, and FIG. 1B is anenlarged view showing the sectional structure substantiallycorresponding to line IB-IB of FIG. 1A.

In the NAND-type flash memory, a cell array 21 is formed in an arrayregion on a Si substrate 11. A high-voltage row decoder circuit(high-voltage transistor) 31 is formed in a peripheral region adjacentto the cell array 21. A guard ring 41 functioning as a peripheralcircuit is formed between the cell array 21 and the row decoder circuit31. The peripheral region is formed with a dummy AA pattern (peripheralcircuit) near the row decoder circuit 31.

In the cell array 21, an N-well region (Cell N-well) 21A is formed onthe surface of the Si substrate 11. In the N-well region 21A, a P-wellregion (Cell P-well) 21B is formed. A plurality of memory cells (notshown) are formed on the surface of the P-well region 21B. Each memorycell has a structure in which a poly gate electrode (first gateelectrode film) 21 b and a SiN film (first mask insulator) 21 c arestacked on a Vcc gate oxide film (Vcc oxide film) 21 a. The poly gateelectrode includes such as poly silicon, polycide and the like. The gateoxide film 21 a is a first gate insulator having a first thickness. TheSiN film 12 c functions as the stopper in CMP.

Conversely, the row decoder circuit 31, guard ring 41 and dummy AApattern 51 are formed using high breakdown voltage (Vpp) gate oxidefilms (Vpp oxide film) 31 a, 41 a and 51 a, respectively. Each of thegate oxide films 31 a, 41 a and 51 a is a second gate insulator having asecond thickness greater than the first thickness of the gate oxide film21 a. In other words, the row decoder circuit 31 includes a high-voltagetransistor (not shown) formed on the surface of the Si substrate 11. Thehigh-voltage transistor has a structure in which a poly gate electrode(second gate electrode film) 31 b and a SiN film (second mask insulator)31 c are stacked on the Vpp gate oxide film 31 a. The SiN film 31 cfunctions as the stopper in CMP. The guard ring 41 is formed on eachsurface of well regions 21A, 21B and N-well (NW) 41A. Each guard ring 41has a structure in which a poly gate electrode (second gate electrodefilm) 41 b and a SiN film (second mask insulator) 41 c are stacked onthe Vpp gate oxide film 41 a. The SiN film 41 c functions as the stopperin CMP. The dummy AA pattern 51 is formed on the surface of the Sisubstrate 11 adjacent to the row decoder circuit 31. The dummy AApattern 51 has a structure in which a poly gate electrode (second gateelectrode film) 51 b and a SiN film (second mask insulator film) 51 care stacked on the Vpp gate oxide film 51 a. The SiN film 51 c functionsas the stopper in CMP.

An STI isolation region 12 burying insulator is formed between regions(21 and 41, 41 and 31, 31 and 51).

Conventionally, the guard ring and dummy pattern in the periphery of therow decoder circuit have been formed using a Vcc oxide film. The guardring and dummy pattern are formed in a high-breakdown-voltage oxide filmregion.

Namely, the guard ring 41 and the dummy AA pattern 51 are formed usingVpp oxide films 41 a and 51 a, respectively. In this way, it is possibleto offset the step (global step shown by “a” in FIG. 5A) on the uppersurface of the stopper SiN film 31 c around the high-voltage transistorof the row decoder circuit 31. As a result, the SiN film 31 is preventedfrom being excessively reduced in thickness, so that a sufficient height(h) to the Vpp oxide film 31 a can be secured.

The structure described above is employed, and thereby, the followingeffect is obtained. It is possible to prevent only residual filmthickness of the SiN film 31 c from being greatly reduced between theguard ring 41 and the row decoder circuit 31 and between the row decodercircuit 31 and the dummy AA pattern 51. Therefore, it is possible tosolve the conventional problem of reducing a margin for CMP when gatepre-forming process is employed because the NAND-type flash memory hasthe high-voltage transistor in the row decoder section. As a result, theVpp oxide film 31 a of the row decoder circuit 31 is prevented frombeing easily damaged, and failure such as gate leakage is prevented.

Second Embodiment

FIG. 2A to FIG. 2D show a method of manufacturing a NAND-type flashmemory formed by gate pre-forming process according to a secondembodiment of the present invention. Here, the cell section formed withthe cell array has a different structure with the Vcc section formedwith a guard ring and a dummy AA pattern.

As shown in FIG. 2A, the following films are formed in the array region(cell section) on the Si substrate 11. The films are Vcc oxide film(first gate insulator 21 a having the first thickness, poly gateelectrode (first gate electrode film) 21 b and stopper SiN film (firstmask insulator) 21 c. In this case, various materials are deposited onthe Si substrate 11, and thereafter, patterning is carried out. The Vccoxide film 21 a, poly gate electrode 21 b and stopper SiN film 21 cformed in peripheral regions (Vpp section/Vcc section) other than thearray region are removed. In this way, the Si substrate 11 of theperipheral region is exposed.

As illustrated in FIG. 2B, one region (Vpp section) of the peripheralregions on the Si substrate is formed with the Vpp oxide film (secondgate insulator) 31 a having a second thickness greater than the firstthickness of the Vcc oxide film 21 a. The other region (Vcc section) ofthe peripheral regions is formed with Vcc oxide films (third gateinsulator) 41 a′ and 51 a′ having a thickness the same as the firstthickness of the Vcc oxide film 21 a. Thereafter, a poly gate electrodematerial 61 b and stopper SiN film material 61 c are successivelydeposited on the stopper SiN film 21 c, Vpp oxide film 31 a and Vccoxide films 41 a′ and 51 a′. In this case, the thickness of the stopperSiN film material 61 c is made greater than that of the stopper SiN film21 c.

As depicted in FIG. 2C, the poly gate electrode material 61 b andstopper SiN film material 61 c formed on the cell section is removed. Inthis way, the poly gate electrode (second gate electrode film) 31 b andthe stopper SiN film (second mask insulator) 31 c are stacked on the Vppoxide film 31 a of the Vpp section. The poly gate electrodes (secondgate electrode film) 41 b, 51 b and the stopper SiN film (second maskinsulator) 41 c, 51 c are stacked on the Vcc oxide film 41 a′ and 51 a′of the Vcc section, respectively.

As seen from FIG. 2D, an isolation trench 71 is correspondingly formedon the surface of the Si substrate 11 between the cell section andperipheral regions, that is, Vpp section/Vcc section (STI formation). Aburied insulator 72 is deposited, and thereafter, planarizing by CMP iscarried out, and thus, a STI-structure isolation 12 is formed.

Thereafter, memory cell, row decoder circuit (high-voltage transistor),and guard ring and dummy AA pattern are formed with respect to cellsection, Vpp section, and Vcc section, respectively (although theseformations are not shown). In this manner, a NAND-type flash memory isrealized.

In the embodiment, the SiN film material 61 c (31 c, 41 c, 51 c) of theperipheral regions (i.e., Vcc and Vpp sections) is formed to be thickerthan the SiN film material 21 c of the cell section. In this way, it ispossible to prevent the thickness of the SiN film 31 c from beingreduced by CMP. In addition, it is possible to make large enough theheight h1 to the Vpp oxide film 31 a and the height h2 to Vcc oxide film41 a′, 51 a′. Therefore, this serves to prevent gate oxide film (Vppoxide film 31 a) from being damaged in the process after CMP; as aresult, a sufficient margin for CMP can be achieved.

As described above, the SiN film used as the stopper in CMP for STIformation is formed separately in its thickness in the cell section andthe peripheral regions. More specifically, the SiN film of the Vppsection is formed to be thicker than that of the cell section. In thisway, it is possible to increase the residual film thickness of the SiNfilm of the high-voltage transistor in process. As a result, asufficient margin for CMP can be achieved.

In addition, the second embodiment has the following advantage, unlikethe first embodiment. Namely, Vcc oxide films 41 a′ and 51 a′ of theguard ring 41 and the dummy AA pattern 51 formed in the Vcc section neednot be formed to have the same thickness as the Vpp oxide film 31 a.

Third Embodiment

FIG. 3A to FIG. 3D show a method of manufacturing a NAND-type flashmemory formed by gate pre-forming process according to a thirdembodiment of the present invention. Here, the cell section formed withthe cell array and the Vcc section formed with the guard ring and thedummy AA pattern have the same structure.

As shown in FIG. 3A, the following films are formed in the array region(cell section) and Vcc section (first peripheral region) on the Sisubstrate 11. The films are Vcc oxide films (first gate insulator) 21 a,41 a′ and 51 a′ having the first thickness, poly gate electrodes (firstgate electrode film) 21 b, 41 b and 51 b and stopper SiN films (firstmask insulator) 21 c, 41 c and 51 c. In this case, various materials aredeposited on the Si substrate 11, and thereafter, patterning is carriedout. The Vcc oxide films 21 a, 41 a′ 51 a′, poly gate electrodes 21 b,41 b, 51 b and stopper SiN films 21 c, 41 c, 51 c formed in a Vppsection (second peripheral region) other than the array region and theVcc section are removed. In this way, the Si substrate 11 of the Vppsection is exposed.

As illustrated in FIG. 3B, the Vpp section on the Si substrate is formedwith the Vpp oxide film (second gate insulator) 31 a having the secondthickness thicker than the Vcc oxide film 21 a. Thereafter, a poly gateelectrode material 61 b and stopper SiN film material 61 c aresuccessively deposited on the stopper SiN films 21 c, 41 c, 51 c and theVpp oxide film 31 a. In this case, the thickness of the poly gateelectrode material 61 b is made thinner than the poly gate electrodes 21b, 41 b and 51 b. In addition, the stopper SiN film material 61 c isdeposited to be flush with the upper surface of the stopper SiN films 21c, 41 c and 51 c.

As depicted in FIG. 3C, the poly gate electrode material 61 b andstopper SiN film material 61 c formed on the cell and Vcc sections areremoved. In this way, the poly gate electrode (second gate electrodefilm) 31 b and the stopper SiN film (second mask insulator) 31 c arestacked on the Vpp oxide film 31 a of the Vpp section.

As seen from FIG. 3D, an isolation trench 71 is correspondingly formedon the surface of the Si substrate 11 between the cell section and theVpp/Vcc section (STI formation). A buried insulator 72 is deposited, andthereafter, planarizing by CMP is carried out, and thus, a STI isolation12 is formed.

Thereafter, memory cell, row decoder circuit (high-voltage transistor)and guard ring and dummy AA pattern are formed with respect to cellsection, Vpp section and Vcc section, respectively (these formations arenot shown). In this way, a NAND-type flash memory is realized.

In the embodiment, stopper SiN films 31 c and 21 c of the row decodercircuit and the cell section are readily formed in a state their uppersurfaces are flush with each other. In this way, it is possible toprevent an extra reduction of the thickness of the SiN film 31 c in CMP,and to sufficiently take the height to the Vpp oxide film 31 a.Therefore, this serves to prevent the gate oxide film (Vpp oxide film 31a) from being damaged in the process after CMP; as a result, asufficient margin for CMP can be achieved.

As described above, the SiN film used as the stopper in CMP for STIformation is formed separately in its thickness in the cell section andthe Vpp section. More specifically, stopper SiN films of the Vpp sectionand the cell section are readily formed in the state that their uppersurfaces are flush with each other. In this way, it is possible toincrease the residual film thickness of the SiN film of the high-voltagetransistor in process. As a result, a sufficient margin for CMP can beachieved.

In addition, according to the third embodiment, only Vpp oxide film 31 acan be formed to be thicker than Vcc oxide films 41 a′ and 51 a′, likethe second embodiment described before.

Fourth Embodiment

FIG. 4A to FIG. 4C show a method of manufacturing a NAND-type flashmemory formed by gate pre-forming process according to a fourthembodiment of the present invention. Here, the cell section formed withthe cell array and the Vcc section formed with guard ring and dummy AApattern have the same structure.

As shown in FIG. 4A, the surface of the Si substrate 11 is selectivelyetched using a photo engraving process (PEP) and dry etching techniques.In this way, the Vpp section (first peripheral region) is formed with arecess 81, which has a height lower than the cell and Vcc sections. Inthis case, the depth of the recess 81 is approximately the same as thethickness of the Vpp oxide film (first gate insulator) formed therein.

As illustrated in FIG. 4B, a Vpp oxide film 31 a having a firstthickness is formed in the recess 81 formed at the Vpp section on the Sisubstrate 11. Vcc oxide films (second gate insulator) 21 a, 41 a′ and 51a′ having a second thickness less than that of the Vpp oxide film 31 aare formed in the array region (cell section) and the Vcc section(second peripheral region) on the Si substrate 11. Thereafter, a polygate electrode material 61 b and stopper SiN film material 61 c aresuccessively deposited on the Vcc oxide films 21 a, 41 a, 51 a and theVpp oxide film 31 a. In this way, poly gate electrodes (second gateelectrode film) 21 b, 41 b, 51 b and stopper SiN films (second maskinsulator) 21 c, 41 c, 51 c are stacked on the Vcc oxide films 21 a, 41a′ and 51 a′ of the cell and Vcc sections. The poly gate electrode(first gate electrode film) 31 b and the stopper SiN film (first maskinsulator) 31 c are stacked on the Vpp oxide film 31 a of the Vppsection. In this case, the Vpp oxide film 31 a is formed in the recess81, and thereby, the surface of the stopper SiN film 31 c isapproximately flush with that of the stopper SiN films 21 c, 41 c and 51c.

As depicted in FIG. 4C, an isolation trench 71 is correspondingly formedon the surface of the Si substrate 11 between the cell/Vcc section andthe Vpp section, that is, Vpp section/Vcc section (STI formation). Aburied insulator 72 is deposited, and thereafter, planarizing by CMP iscarried out, and thus, a STI isolation 12 is formed.

Thereafter, a memory cell, row decoder circuit (high-voltage circuit)and guard ring and dummy AA pattern are formed with respect to the cellsection, Vpp section and Vcc section, respectively (these formations arenot shown). In this way, a NAND-type flash memory is realized.

In the embodiment, the silicon surface of the Vpp section is positionedlower than the cell section by the film thickness of the Vpp oxide film31 a. Thus, the upper surface of the SiN film 31 c is readily flush withthat of the SiN film 21 c of the cell section. In this way, it ispossible to prevent an excess reduction of thickness of the SiN film 31c by CMP, and to achieve a sufficient height to the Vpp oxide film 31 a.Therefore, this serves to prevent gate oxide film (Vpp oxide film 31 a)from receiving damage in process after CMP; as a result, a sufficientmargin for CMP can be achieved.

As described above, the SiN film used as the stopper in CMP for STIformation is formed separately in its thickness in the cell section andperipheral regions. More specifically, the stopper SiN film of the Vppsection is formed to have the same thickness as that of the cellsection. In this way, it is possible to increase the residual filmthickness of the SiN film of the high-voltage transistor in process. Asa result, the margin for CMP can be sufficiently obtained.

In addition, according to the fourth embodiment, only Vpp oxide film 31a can be formed to be thicker than Vcc oxide films 41 a′ and 51 a′, likethe second and third embodiment described before.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. (canceled)
 2. A non-volatile semiconductor memory device comprising:a memory cell array formed with a first gate insulating film having afirst thickness; and a high-voltage transistor portion including asecond gate insulating film with a second thickness which is greaterthan the first gate insulating film; and a first polysilicon film on thefirst gate insulating film, wherein the second gate insulating film isprovided in a surface portion of a substrate.
 3. The device according toclaim 2, further comprising, a first SiN film on the first polysiliconfilm.
 4. The device according to claim 2, further comprising a secondpolysilicon film on the second gate insulating film.
 5. The deviceaccording to claim 4, further comprising, a second SiN film on thesecond polysilicon film.
 6. The device according to claim 2, furthercomprising, an isolation region arranged between the memory cell arrayand the high-voltage transistor portion, the isolation region beingformed in a trench formed in the substrate.
 7. The device according toclaim 2, wherein the high-voltage transistor portion includes a rowdecoder circuit.
 8. The device according to claim 2, further comprisinga guard ring portion arranged between the memory cell array and thehigh-voltage transistor portion.
 9. The device according to claim 2,wherein the guard ring portion includes an insulating film having thesecond thickness.